The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2005

Filed:

Oct. 15, 2002
Applicants:

Takashi Suezaki, Otsu, JP;

Eiji Kuribe, Neyagawa, JP;

Inventors:

Takashi Suezaki, Otsu, JP;

Eiji Kuribe, Neyagawa, JP;

Assignee:

Kaneka Corporation, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2131 ;
U.S. Cl.
CPC ...
Abstract

In a method of depositing a silicon thin film by using a vertical plasma CVD apparatus having steps of holding a substrate having an area not smaller than 1,200 cmand having a conductive film formed thereon with a substrate holder, disposing the substrate to face an electrode, and depositing a silicon thin film under a power density of 100 mW/cmor more, the substrate holder is electrically insulated from the conductive film formed on the surface of the substrate by forming a separation groove in the conductive film.


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