The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Jun. 20, 2003
Binn Kim, Seoul, KR;
Hae-yeol Kim, Anyang-si, KR;
Jong-uk Bae, Seoul, KR;
LG.Philips LCD Co., Ltd., Seoul, KR;
Abstract
A method of forming a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; depositing a catalyst metal on the amorphous silicon layer; disposing first and second electrodes contacting the amorphous silicon layer along a first direction; heating the amorphous silicon layer under a first temperature and simultaneously applying a first voltage to the first and second electrodes to form a first crystallized amorphous silicon layer; disposing third and fourth electrodes contacting the first crystallized amorphous silicon layer along a second direction, the second direction being different from the first direction; and heating the first crystallized amorphous silicon layer under a second temperature and simultaneously applying a second voltage to the third and fourth electrodes to form a secondly crystallized amorphous silicon layer.