The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Oct. 16, 2003
Chul-sung Kim, Sungnam-shi, KR;
Si-young Choi, Sungnam-shi, KR;
Jung-woo Park, Seoul, KR;
Jong-ryol Ryu, Yongin-shi, KR;
Byeong-chan Lee, Yongin-shi, KR;
Chul-Sung Kim, Sungnam-shi, KR;
Si-Young Choi, Sungnam-shi, KR;
Jung-Woo Park, Seoul, KR;
Jong-Ryol Ryu, Yongin-shi, KR;
Byeong-Chan Lee, Yongin-shi, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile