The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Apr. 07, 2004
Semiconductor device and method for fabricating the same including interconnection of two electrodes
Yasunori Iriyama, Kawasaki, JP;
Tetsuo Izawa, Kawasaki, JP;
Yasunori Iriyama, Kawasaki, JP;
Tetsuo Izawa, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device comprises a first transistorhaving a first gate electrode; a second transistorhaving a second gate electrodewhich is different from the first gate electrode; an insulation filmformed between the first gate electrode and the second gate electrode; and an interconnection electrodeburied in a concavityformed in the first gate electrode, the second gate electrode and the insulation film and electrically interconnecting the first gate electrode and the second gate electrode. The interconnection electrode is buried in the concavity formed in the first gate electrode, the second gate electrode and the insulation film, and the interconnection electrodes electrically interconnects the first gate electrode and the second gate electrode, whereby the semiconductor device can have high integration and can be reliable.