The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Sep. 12, 2002
Applicants:
Kee-jeung Lee, Ichon, KR;
Jong-hyuk OH, Ichon, KR;
Inventors:
Kee-Jeung Lee, Ichon, KR;
Jong-Hyuk Oh, Ichon, KR;
Assignee:
Hynix Semiconductor Inc., Kyoungki-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 218247 ;
U.S. Cl.
CPC ...
Abstract
Disclosed is a semiconductor device having a double dielectric layer, wherein the double dielectric layer comprises a first dielectric layer having aluminum and a second dielectric layer, of which a dielectric constant is higher than that of the first dielectric layer, stacked on the first dielectric layer. Also disclosed are methods for fabricating the semiconductor device.
Lee, Kee-Jeung. (2005). Semiconductor device and method for fabricating the same (U.S. Patent No. 6849505). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6849505
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile