The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Jul. 16, 2003
Tingkai LI, Vancouver, WA (US);
Wei Pan, Vancouver, WA (US);
Robert A. Barrowcliff, Vancouver, WA (US);
David R. Evans, Beaverton, OR (US);
Sheng Teng Hsu, Camas, WA (US);
Tingkai Li, Vancouver, WA (US);
Wei Pan, Vancouver, WA (US);
Robert A. Barrowcliff, Vancouver, WA (US);
David R. Evans, Beaverton, OR (US);
Sheng Teng Hsu, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method of forming an Hpassivation layer in an FeRAM includes preparing a silicon substrate; depositing a layer of TiOthin film, where 0<x<2, on a damascene structure; plasma space etching of the Ti or TiOthin film to form a TiOsidewall; annealing the TiOside wall thin film form a TiOthin film; depositing a layer of ferroelectric material; and metallizing the structure to form a FeRAM.