The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
May. 30, 2002
Sung Gyu Pyo, Kyonggi-do, KR;
Sung Gyu Pyo, Kyonggi-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for forming a diffusion barrier layer of a semiconductor device by using an Atomic Layer Deposition (ALD) is disclosed, which, in a method for forming a diffusion barrier layer on an entire surface of a semiconductor substrate before forming a metal pipe connected with the semiconductor substrate through a contact hole, the contact hole being formed to expose one region of the semiconductor substrate by selectively removing an insulating interlayer on the semiconductor substrate, the method includes the steps of forming Ti/TiN layers without being exposed to the air by alternately providing a precursor set by using an atomic layer deposition (ALD) and many kinds of reacting gases, performing a silane treatment on the TiN layer, and forming a Ti thin layer by the ALD.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile