The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Mar. 18, 2004
Atsushi Ohkubo, Sodegaura, JP;
Satoru Okada, Sodegaura, JP;
Tsuyoshi Fujimoto, Sodegaura, JP;
Takeshi Koiso, Sodegaura, JP;
Kiyofumi Muro, Ichihara, JP;
Michio Ohkubo, Chiyoda-ku, JP;
Yutaka Ohki, Chiyoda-ku, JP;
Atsushi Ohkubo, Sodegaura, JP;
Satoru Okada, Sodegaura, JP;
Tsuyoshi Fujimoto, Sodegaura, JP;
Takeshi Koiso, Sodegaura, JP;
Kiyofumi Muro, Ichihara, JP;
Michio Ohkubo, Chiyoda-ku, JP;
Yutaka Ohki, Chiyoda-ku, JP;
Mitsui Chemicals Inc., Tokyo, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor laser device emitting a laser beam having stable emitting wavelength and a multimode spectrum is provided. The semiconductor laser device is a Fabry-Perot type semiconductor laser device having a layer structure including an active layer of a quantum well structure, and emitting a laser beam having wavelength stabilized by an action of return light and having a multimode spectrum, wherein each well layer satisfies relation:Γ/≦1.3×10nmwhere Γ and d(nm) are an optical confinement factor and a thickness of a well layer, respectively.