The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2005

Filed:

Feb. 03, 2003
Applicants:

Jian Chen, San Jose, CA (US);

Long C. Pham, San Jose, CA (US);

Alexander K. Mak, Los Altos, CA (US);

Inventors:

Jian Chen, San Jose, CA (US);

Long C. Pham, San Jose, CA (US);

Alexander K. Mak, Los Altos, CA (US);

Assignee:

SanDisk Corporation, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1600 ;
U.S. Cl.
CPC ...
Abstract

Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.


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