The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Jun. 02, 2003
Tomoaki Yabe, Kawasaki, JP;
Tomoaki Yabe, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An SRAM cell comprising a first inverter comprising a first load element and a first driver NMOSFET, a second inverter comprising a second load element and a second driver NMOSFET and having input and output terminals cross-coupled to output and input terminals of the first inverter, respectively, a first transfer gate NMOSFET having a current path inserted between the first inverter and a first bit line and a gate connected to a word line, and a second transfer gate NMOSFET having a current path inserted between the second inverter and a second bit line and a gate connected to the word line, wherein a current drivability of the first inverter and the first transfer gate NMOSFET for the first bit line is set to be larger than that of the second inverter and the second transfer gate NMOSFET for the second bit line.