The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Jun. 03, 2003
Atsushi Semi, Matsubara, JP;
Atsushi Semi, Matsubara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device includes: a semiconductor substrate; a bonding pad having an interconnection region that provides for an external electrical contact; a first interlayer insulating layer interposed between the semiconductor substrate and the bonding pad; and a metal wiring layer that is embedded in the first interlayer insulating layer. The metal wiring layer is made of a softer material than that of the first interlayer insulating layer. The metal wiring layer at least partially overlaps with the interconnection region in the stacked direction of the layers, and the area of metal wiring layer overlapping with the interconnection region includes notches that extend through the metal wiring layer in the stacked direction and separate the metal wiring layer in the layer direction. Portions of the first interlayer insulating layer are embedded in the notches. This enables the size of the semiconductor device to be reduced by efficiently utilizing the underlying layers of the bonding pad while preventing cracking in these layers.