The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2005

Filed:

Jun. 25, 2002
Applicants:

Sylvia W. Thomas, Orlando, FL (US);

Michael Jay Parrish, St. Cloud, FL (US);

Tony G. Ivanov, Orlando, FL (US);

Edward Belden Harris, Orlando, FL (US);

Richard William Gregor, Winter Park, FL (US);

Michael Scott Carroll, Orlando, FL (US);

Inventors:

Sylvia W. Thomas, Orlando, FL (US);

Michael Jay Parrish, St. Cloud, FL (US);

Tony G. Ivanov, Orlando, FL (US);

Edward Belden Harris, Orlando, FL (US);

Richard William Gregor, Winter Park, FL (US);

Michael Scott Carroll, Orlando, FL (US);

Assignee:

Agere Systems, Inc., Allentown, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27108 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor device having a capacitor integrated in a damascene structure. In one embodiment, the capacitor is formed entirely within a metallization layer of a damascene structure, having therein a semiconductor device component. Preferably, the capacitor is formed within a trench, having been etched in the dielectric material of the metal layer and the capacitor includes a first capacitor electrode formed within the recess in electrical contact with the device component of the metallization layer. An insulator may be formed over the first capacitor electrode, with a second capacitor electrode formed over the insulator. These elements are preferably conformally deposited within the trench, thereby forming a recess, a portion of which extends within the trench. A subsequently fabricated device component may then be placed in electrical contact with the second capacitor electrode.


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