The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Jun. 05, 2002
Michihito Ueda, Takatsuki, JP;
Kenji Toyoda, Osaka, JP;
Kiyoyuki Morita, Yawata, JP;
Takashi Ohtsuka, Toyonaka, JP;
Michihito Ueda, Takatsuki, JP;
Kenji Toyoda, Osaka, JP;
Kiyoyuki Morita, Yawata, JP;
Takashi Ohtsuka, Toyonaka, JP;
Matsushita Electric Industrial Co., LTD., Osaka, JP;
Abstract
In an electric potential generating device, a source of an N type MIS transistor is mutually connected to that of a P type MIS transistor and also connected to an output terminal. A drain of an N type MIS transistoris connected to a power supply voltage supply portion for supplying power supply voltage VDD, and a drain of the P type MIS transistor is connected to a ground. In addition, a substrate potential of the N type MIS transistor is a ground voltage VSS, and that of a P type MIS transistoris the power supply voltage VDD. Thus, it is constituted as a source follower circuit for taking output out of the source. It is possible, by utilizing this electric potential generating device, to obtain a logic transformation circuit for stably switching between NOR operation and NAND operation.