The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Jun. 17, 2003
John C. C. Fan, Brookline, MA (US);
Hong K. Choi, Sharon, MA (US);
Tchang-hun OH, Sharon, MA (US);
Jyh Chia Chen, Ellicott City, MD (US);
Jagdish Narayan, Raleigh, NC (US);
John C. C. Fan, Brookline, MA (US);
Hong K. Choi, Sharon, MA (US);
Tchang-Hun Oh, Sharon, MA (US);
Jyh Chia Chen, Ellicott City, MD (US);
Jagdish Narayan, Raleigh, NC (US);
Kopin Corporation, Taunton, MA (US);
Abstract
A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.