The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Dec. 31, 2003
Shih-chen Wei, Miaoli Hsien, TW;
Yung-hsin Shie, Kaohsiung, TW;
Wen-liang LI, Tainan, TW;
Shi-ming Chen, Hsinshi, Tainan County, TW;
Shih-Chen Wei, Miaoli Hsien, TW;
Yung-Hsin Shie, Kaohsiung, TW;
Wen-Liang Li, Tainan, TW;
Shi-Ming Chen, Hsinshi, Tainan County, TW;
Epitech Corporation, Ltd., Tainan, TW;
Other;
Abstract
A light-emitting device and a method for manufacturing the same are described, by forming a SiN/AlInGaN(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer between a substrate and an undoped GaN as a buffer layer, so as to reduce dislocation density of the buffer layer. In the SiN/AlInGaN(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer, AlInGaN(0≦x≦1, 0≦y≦1, x+y≦1) can be n-type, p-type or undoped.