The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Mar. 25, 2002
Katsuhiro Inoue, Ama-gun, JP;
Kenji Morimoto, Kasugai, JP;
Masaaki Masuda, Nagoya, JP;
Shinji Kawasaki, Nagoya, JP;
Hiroaki Sakai, Nagoya, JP;
Katsuhiro Inoue, Ama-gun, JP;
Kenji Morimoto, Kasugai, JP;
Masaaki Masuda, Nagoya, JP;
Shinji Kawasaki, Nagoya, JP;
Hiroaki Sakai, Nagoya, JP;
NGK Insulators, Ltd., , JP;
Abstract
A silicon nitride porous body which is obtained by nitriding a molded body having metallic silicon as a main component and by performing a high temperature heating treatment at a temperature higher than the nitriding temperature, and which has a porous structure with an average pore diameter of 3 μm or above, and contains at least one kind of element selected from the group consisting of the groups 2A, 3A, 3B inclusive of lanthanoid elements, and 4B. The silicon nitride porous body has a porous structure with a large average pore diameter, a test specimen cut out from the porous body exhibiting a high thermal conductivity and a small thermal expansion coefficient, and can be suitably used in a component for purifying gas and/or solution such as a ceramic filter.