The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2005

Filed:

Sep. 25, 2002
Applicants:

Kohji Andoh, El Segundo, CA (US);

Davide Chiola, Redondo Beach, CA (US);

Daniel M. Kinzer, El Segundo, CA (US);

Inventors:

Kohji Andoh, El Segundo, CA (US);

Davide Chiola, Redondo Beach, CA (US);

Daniel M. Kinzer, El Segundo, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21425 ;
U.S. Cl.
CPC ...
Abstract

A Schottky diode is adjusted by implanting an implant species by way of a titanium silicide Schottky contact and driving the implant species into the underlying silicon substrate by a rapid anneal. The implant is at a low energy, (e.g. about 10 keV) and at a low dose (e.g. less than about 9E12 atoms per cm) such that the barrier height is slightly increased and the leakage current reduced without forming pn junction and retaining the peak boron concentration in the titanium silicide layer.


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