The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2005

Filed:

Mar. 11, 2003
Applicants:

Toshihiko Fukushima, Nara, JP;

Kazuhiro Natsuaki, Sakurai, JP;

Takao Setoyama, Kawasaki, JP;

Yuji Asano, Kawasaki, JP;

Morio Katou, Kawasaki, JP;

Inventors:

Toshihiko Fukushima, Nara, JP;

Kazuhiro Natsuaki, Sakurai, JP;

Takao Setoyama, Kawasaki, JP;

Yuji Asano, Kawasaki, JP;

Morio Katou, Kawasaki, JP;

Assignees:

Sharp Kabushiki Kaisha, Osaka, JP;

Fujitsu Limited, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2100 ; H01L 2714 ; H01L 3100 ;
U.S. Cl.
CPC ...
Abstract

A method for producing a semiconductor device with a built-in light receiving element is provided. The device comprises a light receiving element region for receiving and converting an optical signal to an electric signal, the light receiving element region being provided on a substrate. The method comprises the steps forming an anti-reflection film in the light receiving element region on the substrate, and forming a protection film, the protection film serving as an etch stop film in a subsequent etching step.


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