The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Apr. 24, 2002
Takuya Komoda, Sanda, JP;
Koichi Aizawa, Neyagawa, JP;
Yoshiaki Honda, Souraku-gun, JP;
Tsutomu Ichihara, Hirakata, JP;
Yoshifumi Watabe, Tondabayashi, JP;
Takashi Hatai, Neyagawa, JP;
Toru Baba, Shijonawate, JP;
Yoshiyuki Takegawa, Nara, JP;
Takuya Komoda, Sanda, JP;
Koichi Aizawa, Neyagawa, JP;
Yoshiaki Honda, Souraku-gun, JP;
Tsutomu Ichihara, Hirakata, JP;
Yoshifumi Watabe, Tondabayashi, JP;
Takashi Hatai, Neyagawa, JP;
Toru Baba, Shijonawate, JP;
Yoshiyuki Takegawa, Nara, JP;
Matsushita Electric Works, Ltd., Osaka, JP;
Abstract
In a field emission-type electron source (), a strong field drift layer () and a surface electrode () consisting of a gold thin film are provided on an n-type silicon substrate (). An ohmic electrode () is provided on the back surface of the n-type silicon substrate (). A direct current voltage is applied so that the surface electrode () becomes positive in potential relevant to the ohmic electrode (). In this manner, electrons injected from the ohmic electrode () into the strong field drift layer () via the n-type silicon substrate () drift in the strong field drift layer (), and is emitted to the outside via the surface electrode (). The strong field drift layer () has: a number of semiconductor nanocrystals () of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (); and a number of insulating films () each of which is formed on the surface of each of the semiconductor nanocrystals () and each having film thickness to an extent such that an electron tunneling phenomenon occurs.