The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Aug. 09, 2001
Herbert Palm, Hoehenkirchen, DE;
Josef Willer, Riemerling, DE;
Achim Gratz, Steinbach-Hallenberg, DE;
Jakob Kriz, Dresden, DE;
Mayk Roehrich, Dresden, DE;
Herbert Palm, Hoehenkirchen, DE;
Josef Willer, Riemerling, DE;
Achim Gratz, Steinbach-Hallenberg, DE;
Jakob Kriz, Dresden, DE;
Mayk Roehrich, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
Each memory cell is a memory transistor which is provided on a top side of a semiconductor body and has a gate electrode which is arranged in a trench located between a source region and a drain region that are formed in the semiconductor material. The gate electrode is separated from the semiconductor material by a dielectric material. At least between the source region and the gate electrode and between the drain region and the gate electrode, there is an oxide-nitride-oxide layer sequence. The layer sequence is provided for the purpose of trapping charge carriers at the source and the drain.