The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2005

Filed:

Mar. 18, 2003
Applicants:

Nobuhiko Sawaki, Aichi, JP;

Norikatsu Koide, Aichi, JP;

Kensaku Yamamoto, Hiroshima, JP;

Inventors:

Nobuhiko Sawaki, Aichi, JP;

Norikatsu Koide, Aichi, JP;

Kensaku Yamamoto, Hiroshima, JP;

Assignees:

Sharp Kabushiki Kaisha, Osaka, JP;

Nobuhiko Swaki, Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3300 ; H01L 2100 ; H01S 500 ;
U.S. Cl.
CPC ...
Abstract

A light emitting semiconductor device includes a silicon substrate and a compound semiconductor layer disposed on a main plane of the silicon substrate and represented by a general expression InGaAlN, wherein x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1. The silicon substrate has a groove having an oblique plane corresponding to a plane inclined relative to the substrate's main plane by 62 degrees or a plane inclined relative to the inclined plane in any direction within three degrees, and on the oblique plane a plurality or quantum well layers different in thickness are stacked.


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