The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2005

Filed:

Apr. 25, 2003
Applicants:

Yoji Seki, Yokaichi, JP;

Takeshi Kyoda, Yokaichi, JP;

Yoshio Miura, Yokaichi, JP;

Hisao Arimune, Yokaichi, JP;

Inventors:

Yoji Seki, Yokaichi, JP;

Takeshi Kyoda, Yokaichi, JP;

Yoshio Miura, Yokaichi, JP;

Hisao Arimune, Yokaichi, JP;

Assignee:

Kyocera Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2904 ;
U.S. Cl.
CPC ...
Abstract

There is disclosed a photoelectric conversion device which is manufactured by depositing numerous crystalline semiconductor particles of one conductivity type on a substrate having an electrode of one side to join the crystalline semiconductor particles to the substrate, interposing an insulator among the crystalline semiconductor particles, forming a semiconductor layer of the opposite conductivity type over the crystalline semiconductor particles, and connecting an electrode to the semiconductor layer of the opposite conductivity type, in which the insulator comprises a mixture or reaction product of polysiloxane and polycarbosilane. The insulator interposed among the crystalline semiconductor particles is free from defects such as cracking and peeling, so that a low cost photoelectric conversion device with high reliability can be provided.


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