The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
May. 30, 2003
Christoph Wasshuber, Parker, TX (US);
Christoph Wasshuber, Parker, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a single-electron transistor device (). The device () comprises a source () and drain () located over a substrate () and a quantum island () situated between the source and drain (), to form tunnel junctions () between the source and drain (). The device () further includes a movable electrode () located adjacent the quantum island () and a displaceable dielectric () located between the moveable electrode () and the quantum island (). The present invention also includes a method of fabricating a single-electron device (), and a transistor circuit () that include a single-electron device ().