The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Mar. 22, 2002
Krishna Shenai, Naperville, IL (US);
Malay Trivedi, Phoenix, AZ (US);
Philip Neudeck, Olmstead Falls, OH (US);
Krishna Shenai, Naperville, IL (US);
Malay Trivedi, Phoenix, AZ (US);
Philip Neudeck, Olmstead Falls, OH (US);
Other;
Abstract
A method and apparatus are provided for improving a breakdown voltage of a semiconductor device. The method includes the steps of coupling an electrode of the silicon-carbide diode to a drift layer of the semiconductor device through a charge transfer junction, said drift layer being of a first doping type and providing a junction termination layer of a relatively constant thickness in direct contact with the drift layer of the semiconductor device and in direct contact with an outside edge of the charge transfer junction, said junction termination layer extending outwards from the outside edge of the charge transfer junction, said junction termination layer also being doped with a doping material of a second doping type in sufficient concentration to provide a charge depletion region adjacent the outside edge of the charge transfer junction when the charge transfer junction is reverse biased.