The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Jul. 14, 2003
Applicants:
Hameed A. Naseem, Fayetteville, AR (US);
M. Shahidul Haque, Fayetteville, AR (US);
William D. Brown, Fayetteville, AR (US);
Inventors:
Hameed A. Naseem, Fayetteville, AR (US);
M. Shahidul Haque, Fayetteville, AR (US);
William D. Brown, Fayetteville, AR (US);
Assignee:
The Trustees of the University of Arkansas, Little Rock, AR (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2120 ;
U.S. Cl.
CPC ...
Abstract
A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1×10dopant atoms per cmof silicon.