The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Jul. 23, 2003
Applicant:
Jae-kyu Lee, Kyungki-do, KR;
Inventor:
Jae-Kyu Lee, Kyungki-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2176 ;
U.S. Cl.
CPC ...
Abstract
A method for forming a shallow well of a semiconductor device using low-energy ion implantation is described. A well region is formed to the depth of a trench isolation layer using a low-energy, high-dose ion implantation process. The method for forming a well using low-energy ion implantation can minimize well margin reduction caused by impurity spread and well margin reduction caused by shrinkage of a thick photoresist pattern.