The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Oct. 07, 2003
Applicants:
Tae Ho Choi, Kyunggi-do, KR;
Jae Yeong Kim, Kyunggi-do, KR;
Inventors:
Tae Ho Choi, Kyunggi-do, KR;
Jae Yeong Kim, Kyunggi-do, KR;
Assignee:
Anam Semiconductor, Inc., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21336 ;
U.S. Cl.
CPC ...
Abstract
A cell transistor of a flash memory device includes a semiconductor substrate, a source region, a drain region, a floating gate, an inter-gate insulating layer, and a control gate, wherein the floating gate has a tip protruding into an end portion of the source region. With the application of erasing voltages to the source region and the control gate, an intense electric field is induced on the tip of the floating gate. Accordingly, an erasing efficiency of the cell transistor can be enhanced.