The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Nov. 05, 2003
Shigeki Komori, Tokyo, JP;
Shigeki Komori, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A photoresist () is formed on an element isolation insulating film () so as to cover the upper and side surfaces of a polysilicon film (R) which functions as a resistance element. With the photoresist () as an implantation mask, n-type impurities () such as phosphorus are ion-implanted from a direction substantially normal to the upper surface of a silicon substrate (). The dose is in the order of 10/cm. Through this processing, an LDD region () of MOSFET is formed inside the upper surface of the silicon substrate () within a transistor forming region. The impurities () are also implanted in a polysilicon film (G). On the other hand, as the polysilicon film (R) is covered by the photoresist (), the impurities () are not implanted into the polysilicon film (R).