The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Jun. 18, 2003
Applicants:
Lee Yu-chou, Taipei, TW;
Chen Chiun-hung, Yunlin, TW;
Inventors:
Lee Yu-Chou, Taipei, TW;
Chen Chiun-Hung, Yunlin, TW;
Assignee:
Chungwha Picture Tubes, Ltd., Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2100 ; H01L 2184 ;
U.S. Cl.
CPC ...
Abstract
The present invention relates to reduce contact impedance of a gate electrode of a thin film transistor (TFT). It employs a double layer of AlNd/Cr or AlNd/Cr silicide as a material of the gate electrode and employs plasma atmosphere to clean a contact surface of the gate electrode.