The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Jan. 19, 2001
James R. Kahn, Ft. Collins, CO (US);
Harold R. Kaufman, Laporte, CO (US);
Viacheslav V. Zhurin, Ft. Collins, CO (US);
David A. Baldwin, Annandale, VA (US);
Todd L. Hylton, Great Falls, VA (US);
James R. Kahn, Ft. Collins, CO (US);
Harold R. Kaufman, Laporte, CO (US);
Viacheslav V. Zhurin, Ft. Collins, CO (US);
David A. Baldwin, Annandale, VA (US);
Todd L. Hylton, Great Falls, VA (US);
Kaufman & Robinson, Inc., Ft. Collins, CO (US);
Veeco Instruments Inc., Plainview, NY (US);
Abstract
In one embodiment of this invention, the apparatus for sputter deposition within an evacuated volume comprises a compact gridless ion source into which an ionizable gas is introduced and from which ions leave with directed energies at or near the sputtering threshold and a sputter target near that source, biased negative relative to the surrounding vacuum enclosure, and located within the beam of ions leaving that source. Particles sputtered from the target are deposited on a deposition substrate spaced from both the ion source and the sputter target. An energetic beam of electrons can be generated by the incident ions striking the negatively biased sputter target and the deposition substrate is located either within or outside of this beam, depending on whether the net effect of bombardment by energetic electrons is beneficial or detrimental to that particular deposition process.