The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
May. 23, 2003
Shinji Ishida, Kanagawa, JP;
Hironori Nagasawa, Kanagawa, JP;
Shinji Ishida, Kanagawa, JP;
Hironori Nagasawa, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A bias circuit which supplies a bias voltage to a first transistor comprises a second transistor formed on a same semiconductor substrate as the first transistor and having a control electrode and a first and a second main electrodes; a resistance circuit; and a first and a second level shifters. The second transistor is either a metal semiconductor field effect transistor or a high electron mobility transistor. One end of the resistance circuit is connected to a voltage supply, other end of the resistance circuit is connected to the first main electrode of the second transistor, the control electrode of the second transistor is connected to the second main electrode of the second transistor, the second main electrode of the second transistor is connected to a common voltage. A voltage at the first main electrode of the second transistor is divided by the first and second level shifters and the divided voltage is outputted as the bias voltage.