The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Oct. 05, 2001
Takaaki Murakami, Hyogo, JP;
Kazuyuki Sugahara, Hyogo, JP;
Takaaki Murakami, Hyogo, JP;
Kazuyuki Sugahara, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A field-effect transistor including N-extension regions, an N-drain region, an N-source region and a gate electrode at a surface of a silicon substrate. A sidewall insulating film on one of the side surfaces of the gate electrode partially covers the surface of the N-extension region, and a sidewall insulating film on the other side surface entirely covers the N-extension region. Further, a silicon oxide film covers the surface of N-extension region not covered by the sidewall insulating film. Thereby, resistances of the gate electrode, source region, and drain region can be easily reduced in a transistor having extension regions, which are asymmetrical with respect to the gate electrode.