The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
May. 30, 2003
Woo-chan Jung, Seoul, KR;
Woo-chan Jung, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A semiconductor device and a method for manufacturing the same, wherein a gate electrode structure is formed on a surface of a semiconductor substrate. Next, a gate poly oxide (GPOX) layer is deposited on a surface of the gate electrode structure and on the semiconductor substrate. Then, the surface of the semiconductor substrate is cleaned to remove any residue and the GPOX layer remaining on the semiconductor substrate. Next, an etch stopper is formed on the surface of the gate electrode structure and on the semiconductor substrate. Last, a high-density plasma (HDP) oxide layer is deposited on the etch stopper. The semiconductor device and method for manufacturing the same are capable of preventing bubble defects.