The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Sep. 06, 2002
Applicants:
Susumu Hiyama, Kanagawa, JP;
Akihito Yamamoto, Kanagawa, JP;
Hiroshi Akahori, Kanagawa, JP;
Shigehiko Saida, Mie, JP;
Inventors:
Susumu Hiyama, Kanagawa, JP;
Akihito Yamamoto, Kanagawa, JP;
Hiroshi Akahori, Kanagawa, JP;
Shigehiko Saida, Mie, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2358 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cmor less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O.
Hiyama, Susumu. (2005). Semiconductor device having silicon nitride film and silicon oxide film, and method of fabricating the same (U.S. Patent No. 6841850). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6841850
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile