The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
May. 20, 2003
Applicant:
Hitoshi Miyamoto, Osaka, JP;
Inventor:
Hitoshi Miyamoto, Osaka, JP;
Assignee:
Funai Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2976 ;
U.S. Cl.
CPC ...
Abstract
MOS transistor cellsand MOS transistor cellshaving different gate threshold voltages are formed on a chip. The MOS transistor cellshaving the different gate threshold voltages are connected in parallel.