The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Aug. 02, 2002
Masayuki Koga, Gifu, JP;
Masayuki Koga, Gifu, JP;
Sanyo Electric Co., Ltd., Moriguchi, JP;
Tottori Sanyo Electric Co., Ltd., Tottori, JP;
Abstract
Information is not written in through channel dope, but through the difference of ions implanted into the impurity region of a semiconductor layer. Each memory element has a pair of the thin film transistors. The memory element with '1' written on it and the memory element with '0' written on it are differentiated based on whether the thin film transistors of the pair belongs to the same conductivity type or different conductivity types. Also, when the write-in impurity region is formed adjacent the impurity region, it is possible to differentiate the memory elements based on whether a diode connected to the thin film transistor in series is formed or not. Since these elements can be produced without the ion-implantation through the gate electrode, it is possible to build a mask ROM on the glass substrate. Also, it is possible to differentiate the memory elements based on whether wiring contact holes are formed in the thin film transistor or not. This invention enables the formation of the memory element on the glass substrate to fabricate a mask ROM.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile