The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Jan. 14, 2002
Oliver Gehring, Dresden, DE;
Wolfram Langheinrich, Dresden, DE;
Oliver Gehring, Dresden, DE;
Wolfram Langheinrich, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabricating embedded nonvolatile semiconductor memory cells is described. The method includes forming a first insulating layer on a substrate having a high-voltage region, a memory region and a logic region. The first insulating layer is removed in the memory region, and a second insulating layer is formed. A charge-storing layer is formed and patterned along with a third insulating layer. The first to third insulating layers and also the charge-storing layer are removed in the logic region. A fourth insulating layer is formed and a conductive control layer is formed and patterned.