The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Oct. 10, 2002
Applicants:
Yoshiyuki Hisada, Okazaki, JP;
Eiichi Okuno, Gifu-ken, JP;
Takeshi Hasegawa, Aichi-ken, JP;
Inventors:
Assignee:
Denso Corporation, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21336 ; H01L 2131 ;
U.S. Cl.
CPC ...
Abstract
In a method of fabricating a SiC semiconductor device, a surface of a SiC layer () is processed into a cleaned surface terminated at Si. An oxide film () is formed on the cleaned surface of the SiC layer. The SiC layer with the oxide film is subjected to thermal oxidation at a temperature in a range of 700° C. to 900° C. so that only terminal Si at the cleaned surface of the SiC layer is oxidated and an interface between the oxide film and the SiC layer becomes an SiO/SiC cleaned interface.