The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Nov. 25, 2003
Kyoung Seok Son, Seoul, KR;
Seung Moo Rim, Kyoungki-do, KR;
Hyun Jin Kim, Kyoungki-do, KR;
Jin Hui Cho, Kyoungki-do, KR;
Kyoung Seok Son, Seoul, KR;
Seung Moo Rim, Kyoungki-do, KR;
Hyun Jin Kim, Kyoungki-do, KR;
Jin Hui Cho, Kyoungki-do, KR;
Boe Hydis Technology Co., Ltd., Kyoungki-do, KR;
Abstract
The present invention relates to a method for fabricating a thin film transistor liquid crystal display, which comprises the steps of: forming a gate electrode on an insulating substrate; successively forming first and second insulating films on the insulating substrate including the gate electrode, the first insulating film being formed under first deposition conditions including power, pressure and electrode interval, the second insulating film being formed under second deposition conditions where at least one of the first deposition conditions is changed continuously over time; successively forming first and second amorphous silicon layers on the second insulating film to form an active layer; successively forming an ohmic contact layer and a source/drain electrode on the active layer; and forming a protective film on the resulting structure including the source/drain electrode.