The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Jun. 06, 2001
Yoshiyuki Tani, Osaka, JP;
Yoshiyuki Tani, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A first on-wafer intended pattern and first and second on-wafer alignment marks have been formed in a reference layer that has been formed on a wafer by using a reference-layer-defining photomask. The first on-wafer intended pattern is a part of an isolation film pattern. The first on-wafer alignment mark has the same width and space as those of the first on-wafer intended pattern. The second on-wafer alignment mark has the same width and space as those of a second intended pattern for a layer-to-be-aligned to be formed on the reference layer. A shift Δx is caused between the first and second on-wafer alignment marks because the diffraction of light affects rough and fine patterns on the photomask differently. In performing alignment by reference to the first alignment mark, the position of a mask to be aligned is corrected by the shift Δx.