The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
May. 08, 2003
Masaki Ueno, Itami, JP;
Eiryo Takasuka, Itami, JP;
Soo-jin Chua, Singapore, SG;
Peng Chen, Singapore, SG;
Masaki Ueno, Itami, JP;
Eiryo Takasuka, Itami, JP;
Soo-Jin Chua, Singapore, SG;
Peng Chen, Singapore, SG;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
The GaN single-crystal substratein accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NHgas. As a consequence, an atomic rearrangement is effected in the surface of the substratein which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrateTherefore, the surface of an epitaxial layerformed on the substratecan be made flat.