The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2005

Filed:

Jul. 30, 2003
Applicants:

William R. Goyette, San Marcos, CA (US);

Harry S. Harberts, San Marcos, CA (US);

Trung H. Lam, San Diego, CA (US);

Inventors:

William R. Goyette, San Marcos, CA (US);

Harry S. Harberts, San Marcos, CA (US);

Trung H. Lam, San Diego, CA (US);

Assignee:

Northrop Grumman Corporation, Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 114 ;
U.S. Cl.
CPC ...
Abstract

A low noise amplifier (LNA) has a selectable bypass signal path integrated into the same integrated circuit (IC) as the amplifier components. In a normal mode of operation, an integrated mode switch allows an appropriate biasing signal to be applied LNA transistors, which function to amplify an input signal and produce an amplified output signal. In an attenuation mode, which is activated to handle large input signals, the LNA transistors are switched off and the input signal is attenuated by a voltage divider, which provides an attenuated output on a signal path that bypasses the LNA amplifier. An attenuation switching signal not only operates the mode switch in the LNA, but also selects between the normal and bypass outputs of the LNA, for further amplification downstream of the LNA.


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