The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Nov. 05, 2003
Kyosuke Ozaki, Niigata-ken, JP;
Satoshi Waga, Niigata-ken, JP;
Haruhiko Fujimoto, Niigata-ken, JP;
Takashi Sato, Niigata-ken, JP;
Yutaka Matsuo, Fukushima-ken, JP;
Takeshi Ikeda, Niigata-ken, JP;
Kazuaki Kaneko, Niigata-ken, JP;
Takuo Kudo, Niigata-ken, JP;
Kyosuke Ozaki, Niigata-ken, JP;
Satoshi Waga, Niigata-ken, JP;
Haruhiko Fujimoto, Niigata-ken, JP;
Takashi Sato, Niigata-ken, JP;
Yutaka Matsuo, Fukushima-ken, JP;
Takeshi Ikeda, Niigata-ken, JP;
Kazuaki Kaneko, Niigata-ken, JP;
Takuo Kudo, Niigata-ken, JP;
Alps Electric Co., Ltd., Tokyo, JP;
Abstract
IDT electrodes are formed by a Cu alloy. When the wavelength of a SAW propagating in the direction of the X axis of a piezoelectric substrate is indicated by λ, and when the thickness of the IDT electrodes is indicated by H, the standardized thickness H/λ of the IDT electrodes ranges from 0.045 to 0.070, and the piezoelectric substrate is a rotated Y-cut LiTaOsubstrate whose rotational cut angle θ from the Y axis to the Z axis around the X axis ranges from 52.0° to 58.0°. With this arrangement, the reflection coefficient S11 becomes 0.88 or higher.