The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Feb. 24, 2000
Daniel M. Kinzer, El Segundo, CA (US);
Ritu Sodhi, Redondo Beach, CA (US);
Mark Pavier, Guildford, GB;
Daniel M. Kinzer, El Segundo, CA (US);
Ritu Sodhi, Redondo Beach, CA (US);
Mark Pavier, Guildford, GB;
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A power MOSFET has a plurality of spaced rows of parallel coextensive trenches. The trenches are lined with a gate oxide and are filled with conductive polysilicon. Spaced narrow polysilicon strips overlie the silicon surface and connects adjacent trenches to one another. The source contact is made at a location remote from the trenches and between the rows of trenches. The trenches are 1.8 microns deep, are 0.6 microns wide and are spaced by about 0.6 microns or greater. The device has a very low figure of merit and is useful especially in low voltage circuits.