The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2005

Filed:

Apr. 25, 2002
Applicants:

John H. Goebel, Foster City, CA (US);

Robert E. Mcmurray, Jr., Alameda, CA (US);

Inventors:

John H. Goebel, Foster City, CA (US);

Robert E. McMurray, Jr., Alameda, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01J 520 ; G01J 524 ;
U.S. Cl.
CPC ...
Abstract

Bolometer system and method for detecting, at BLIP levels, presence of radiation over a broad range of wavelengths in an infrared spectrum and in a temperature range from 20 K to as high as room temperature. The radiation is received by a Si crystal having a region that is doped with one or more of In, Ga, S, Se, Te, B, Al, P, As and Sb in a concentration ratio in a range such as 5×10to 5×10. Change in electrical resistance ΔR due to receipt of the radiation is measured through a change in voltage difference or current within the crystal, and the quantity ΔR is converted to an estimate of the amount of radiation received. Optionally, incident radiation having an energy high enough to promote photoconductivity is removed before detection.


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