The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2005

Filed:

Oct. 08, 2002
Applicants:

Chul-hwan Choi, Seoul, KR;

Jin-ho Jeon, Seoul, KR;

Yong-gab Kim, Gyeonggi-do, KR;

Sung-hwan Jang, Gyeonggi-do, KR;

Dong-won Lee, Seoul, KR;

Min-woo Lee, Seoul, KR;

Kyung-tae Kim, Gyeonggi-do, KR;

Inventors:

Chul-Hwan Choi, Seoul, KR;

Jin-Ho Jeon, Seoul, KR;

Yong-Gab Kim, Gyeonggi-do, KR;

Sung-Hwan Jang, Gyeonggi-do, KR;

Dong-Won Lee, Seoul, KR;

Min-Woo Lee, Seoul, KR;

Kyung-Tae Kim, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 368 ;
U.S. Cl.
CPC ...
Abstract

A heater assembly that is capable of uniformly heating a wafer in an apparatus for manufacturing a semiconductor device is provided. The heater assembly preferably includes a susceptor configured to support a substrate (wafer). A plurality of heaters can be disposed under the susceptor to heat the wafer. A support is preferably disposed below the heaters to support the heaters, and a power supply provides an electric current to operate the heaters. The support can include a heat-shielding portion that restricts heat conduction between the heaters. The heat-shielding portion preferably comprises heat-resistant material arranged in a groove formed on the support. The heat-shielding portion also preferably supports adjacent peripheral portions of the heaters. Electrical current provided to the heaters is preferably controlled such that the temperature of the heaters are operated in a range of about 390° C. to 420° C. Alternatively, a single or multiple ring-shaped heaters having an internal radiating space can be provided below a peripheral portion of the susceptor to uniformly heat the wafer.


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