The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6838308 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 04, 2005

Filed:

May. 14, 2001
Applicant:

Koichi Haga, Miyagi, JP;

Inventor:

Koichi Haga, Miyagi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2116 ;
U.S. Cl.
CPC ...
Abstract

On a transparent substrate, by use of, for instance, vapor deposition, an Al film is formed. Subsequently, with a DC-bias applied on a surface of the Al film, a first zinc oxide thin film is formed by use of a sputtering method. On a surface of the first zinc oxide thin film, according to an atmospheric MO-CVD method, a second zinc oxide thin film is formed. When the second zinc oxide thin film deposited by use of an MO-CVD method is formed on the first zinc oxide thin film having a-axis orientation, the second zinc oxide thin film becomes to have the a-axis orientation. Since the Al thin film, owing to heat during the deposition by use of the MO-CVD method, is absorbed in the first zinc oxide thin film, the transparency is improved. As a result, a sample having a ZnO/ZnO/Al/glass structure becomes high in the transparency as a whole.


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Haga, Koichi. (2005). Semiconductor polysilicon component and method of manufacture thereof (U.S. Patent No. 6838308). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6838308

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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