The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Apr. 30, 2003
Shu-sung Lin, Taipei, TW;
Bao-chang Lin, Taipei, TW;
Hsin-hsien Wu, Yunlin, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for treating waste gas containing PFC and/or HFC, comprising contacting a mixture of gas waste containing PFC and/or HFC, ozone, and water with an iron oxide catalyst at a temperature between 50 and 300° C. by gas-solid contact to perform an oxidation reaction for reducing the amount of PFC and/or HFC. An apparatus for treating waste gas containing PFC or HFC is also provided. The operational temperature in the present invention is much lower than the prior art, and thus provides lower energy consumption and little risk of fire. The present invention is suitable for the treatment of waste gas containing PFC and/or HFC, especially for the removal of perfluorocompounds from the waste gas generated by semiconductor and photoelectrical product manufacturing plants.