The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Aug. 13, 2003
Hynix Semiconductor Inc., , KR;
Abstract
The present invention provides a method for fabricating a capacitor constituted with double hafnium oxide layers through a plasma enhanced chemical vapor deposition (PECVD) process and a low pressure chemical vapor deposition (LPCVD) process. The method for fabricating the capacitor constituted with the double hafnium oxide layers includes: forming a lower electrode layer over a semiconductor substrate; performing a heat treatment with the lower electrode; forming a first HfO layer over the first HfO layer by using a plasma enhanced chemical vapor deposition (PECVD) method; forming a second HfO layer over the first HfO layer by using a low pressure chemical vapor deposition (LPCVD) method; and performing a plasma treatment process at a high temperature; and forming an upper electrode over the second HfO layer.