The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Jan. 10, 2000
Seamus Paul Whiston, Limerick, IE;
Andrew David Bain, Limerick, IE;
Analog Devices, Inc., Norwood, MA (US);
Abstract
A method for forming an LDNMOS ( ) and LDPMOS ( ) in a CMOS process comprises forming the LDNMOS ( ) and LDPMOS ( ) to a stage where a gate ( ) is laid down on a gate oxide layer ( ) and a locos ( ) is formed over the respective N and P-wells ( ) and ( ) of the LDNMOS ( ) and LDPMOS ( ). A P-body ( ) is formed in the N-well ( ) of the LDNMOS ( ) by implanting a boron dopant in two stages, in the first stage at a first tilt angle (&thgr;) of 45° for forming the P-body ( ) beneath the gate ( ) for determining the source/drain threshold voltage, and subsequently at a second tilt angle (&phgr;) of 7° for extending the P-body ( ) downwardly at ( ) for determining the punchthrough breakdown voltage of the LDNMOS ( ). The formation of an N-body ( ) in a P-well ( ) of the LDPMOS ( ) is similar to the formation of the P-body ( ) with the exception that the dopant is a phosphorous dopant.